Surface Emitting Terahertz Transistor Based on Charge Plasma Oscillation

This simulation based study reports a novel tunable, compact, room temperature terahertz (THz) transistorsource, operated on the concept of charge plasma oscillation with the capability of radiating within aterahertz gap. A vertical cavity with a quasi-periodic distributed-Bragg-reflector has been attached to aTHz plasma wave transistor to achieve a monochromatic coherent surface emission for single as well asmulti-color operation. The resonance frequency has been tuned from 0.5 to 1.5 THz with the variablequality factor of the optical cavity from 5 to 290 and slope efficiency maximized to 11. The proposedsurface emitting terahertz transistor is able to satisfy the demand for compact solid state terahertz sourcesin the field of teratronics. The proposed device can be integrated with Si CMOS technology and has openedthe way towards the development of silicon photonics. KCI Citation Count: 1