Effect of Boron Content and Temperature on Interactions and Electron Transport in BGaN Bulk Ternary Nitride Semiconductors

This work takes place in the context of the development of a transport phenomena simulation based on group IIInitrides. Gallium and boron nitrides (GaN and BN) are both materials with interesting physical properties; they havea direct band gap and are relatively large compared to other semiconductors. The main objective of this paper isto study the effect of boron content on the electron transport of the ternary compound BxGa(1-x)N and the effect ofthe temperature of this alloy at x=50% boron percentage, specifically the piezoelectric, acoustic, and polar opticalscatterings as a function of the energy, and the electron energy and drift velocity versus the applied electric fieldfor different boron compositions (BxGa(1-x)N), at various temperatures for B0.5Ga0.5N. Monte carlo simulation, wasemployed and the three valleys of the conduction band (Γ, L, X) were considered to be non-parabolic. We focus onthe interactions that do not significantly affect the behavior of the electron. Nevertheless, they are introduced toobtain a quantitative description of the electronic dynamics. We find that the form of the velocity-field characteristicchanges substantially when the temperature is increased, and a remarkable effect is observed from the boroncontent in BxGa(1-x)N alloy and the applied field on the dynamics of holders within the lattice as a result of interactionmechanisms. KCI Citation Count: 0