Manipulation of electrical properties in CVD-grown twisted bilayer graphene induced by dissociative hydrogen adsorption

We report hydrogen adsorption on twisted bilayer graphene (tBLG). Raman spectroscopy and the electrical transport properties (electrical resistance and thermoelectric power) confirm the electron doping by hydrogen adsorption, in agreement with the previous report involving exfoliated bilayer graphene (BLG). Common electron doping behaviors were observed at various twist angles (0°, 5°, 12.5°, and 30°), and the adsorptions follow the first-order Langmuir-type adsorption model. Specifically, we analyzed the off-state currents, with band-gap openings of around 13 meV in tBLG with twist angle of 0°, as in Bernal-stacked BLG. •We synthesized twisted bilayer graphene (tBLG) and identified twist angles.•Dissociated hydrogen was adsorbed on tBLG under high temperature and high pressure.•The hydrogenation satisfied Langmuir-type first-order adsorption process.•Electron doping was confirmed by Raman spectroscopy and electrical transport measurement.•Signature of band-gap opening was observed in untwisted (0°) sample.