p-Type Doping of GaSb by Beryllium Grown on GaAs (001) Substrate by Molecular Beam Epitaxy

p-Type Doping of GaSb by Beryllium Grown on GaAs (001) Substrate by Molecular Beam Epitaxy

Be-doped GaSb layers were grown on highly mismatched semi-insulating GaAs substrate (001) with 2° offcut towards at low growth temperature, by molecular beam epitaxy (MBE). The influence of Be doping on the crystallographic quality, surface morphology, and electrical properties, was assessed by X-ra...

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Veröffentlicht in:Journal of semiconductor technology and science 2016, 16(5), 71, pp.695-701
Hauptverfasser: Benyahia, Djalal, Kubiszyn, Lkasz, Michalczewski, Krystian, Keblwski, Artur, Martyniuk, Piotr, Piotrowski, Jozef, Rogalski, Antoni
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Sprache:eng
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전기공학
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Zusammenfassung:Be-doped GaSb layers were grown on highly mismatched semi-insulating GaAs substrate (001) with 2° offcut towards at low growth temperature, by molecular beam epitaxy (MBE). The influence of Be doping on the crystallographic quality, surface morphology, and electrical properties, was assessed by X-ray diffraction, Nomarski microscopy, and Hall effect measurements, respectively. Be impurities are well behaved acceptors with hole concentrations as high as 9×1017 cm-3. In addition, the reduction of GaSb lattice parameter with Be doping was studied. KCI Citation Count: 4
ISSN:1598-1657
2233-4866
DOI:10.5573/JSTS.2016.16.5.695