PC 기판위에 증착된 SiO₂/GZO박막의 전자빔 조사에너지에 따른 특성 변화

Ga-doped ZnO (GZO) single layer and SiO2/GZO bi-layered films were deposited on Polycarbonate(PC) substrate by radio frequency magnetron sputtering. Influence of the structural, electrical, and optical properties of the films was considered. We have considered the influence of electron irradiation energy of 450 and 900 eV on the stuctural, electrical and optical properties of SiO2/GZO thin films. The optical transmittancein a visible wave length region increased with the electron irradiation energy. The electrical resistivity of the films were dependent on the electron’s irradiation energy. The SiO2/GZO films irradiated at 900 eV were showen the lowest resistivity of 7.8 × 10−3 Ωcm. The film which was irradiated by electron at 900 eV shows 84.3% optical transmittance and also shows lower than contact angle of 58o in this study. KCI Citation Count: 1