Study on Superluminescent Diodes Using InGaAs-InAsChirped Quantum Dots

We have fabricated superluminescent diodes (SLD) by using InGaAs-InAs chirped quantum dots (QD). The spectral bandwidth of the SLD was measured to be 170 nm. These results explain the possibility of QD-based SLD exceeding the performance of multi-quantum well-based ones. KCI Citation Count: 13

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Bibliographische Detailangaben
Veröffentlicht in:	Journal of the Korean Physical Society 2004, 45(2), , pp.1193-1195
Hauptverfasser:	한일기, Du chang Heo, 송진동, 이주인, Jung il Lee
Format:	Artikel
Sprache:	eng
Schlagworte:	물리학
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	We have fabricated superluminescent diodes (SLD) by using InGaAs-InAs chirped quantum dots (QD). The spectral bandwidth of the SLD was measured to be 170 nm. These results explain the possibility of QD-based SLD exceeding the performance of multi-quantum well-based ones. KCI Citation Count: 13
ISSN:	0374-4884 1976-8524