Selective Formation of Si Nanocrystals by Assist Ion Beam Irradiation

The deposition of substoichiometric SiOx films is investigated by means of dual ion beam deposition with emphasis on assist ion beam irradiation effect. Linear dependence of oxygen content, x, on oxygen partial pressure is found. Preferential sputtering of Si phase over SiO2 phase during assist ion beam irradiation has the effect of increasing the oxygen content in the ion-beam exposed region. The property indicates the lateral modulation of oxygen content of SiOx film by inserting a shadow mask in the assist ion beam during deposition. The area-selective formation of Si nanocrytals is shown by photoluminescence measurements after post-deposition annealing. KCI Citation Count: 1