Quantum Mechanical Simulation of Charge Distribution in Schottky Barrier MOSFETs
We have performed numerical simulations on Schottky barrier (SB) MOSFETs by solving the twodimensional Poisson equation self-consistently with the Schrodinger equation. We have investigated the equilibrium charge distribution and the conduction energy bending in the inversion layer of the SB-MOSFET...
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Veröffentlicht in: | Journal of the Korean Physical Society 2004, 45(3), , pp.547-550 |
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Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We have performed numerical simulations on Schottky barrier (SB) MOSFETs by solving the twodimensional Poisson equation self-consistently with the Schrodinger equation. We have investigated the equilibrium charge distribution and the conduction energy bending in the inversion layer of the SB-MOSFETs. We have found that the quantum mechanical consideration is crucial for accurate estimation of the current in nano-scale SB-MOSFETs. We have also found that the threshold voltage for channel inversion increases when the channel length becomes shorter than about 30 nm, in contrast to conventional MOSFETs. KCI Citation Count: 2 |
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ISSN: | 0374-4884 1976-8524 |