Field-Effect Ion Transport Devices of Carbon Nanotube Channel: Schematics and Simulations

We investigated eld-eect ion-transport devices based on carbon nanotubes by using classical molecular dynamics simulations under applied external force elds, and we present model schematics that can be applied to the nanoscale data storage devices and unipolar ionic eld-eect transistors. As the applied external force eld is increased, potassium ions rapidly ow through the nanochannel. Under low external force elds, thermal uctuations of the nanochannels aect tunneling of the potassium ions whereas the eects of thermal uctuations are negligible under high external force elds. Since the electric current conductivity increases when potassium ions are inserted into fullerenes or carbon nanotubes, the eld eect due to the gate, which can modify the position of the potassium ions, changes the tunneling current between the drain and the source. KCI Citation Count: 4