Photoluminescence Study on Crystalline Silicon Single Quantum Wells

Crystalline silicon (c-Si) single quantum wells with the structure of SiO2/c-Si/SiO2 are fabri- cated by high-temperature thermal oxidation of silicon-on-insulator wafers and are studied by using photoluminescence (PL) measurements at room temperature. Four emission peaks are observed around 1.8, 2.3, 2.7, and 3.0 eV. The PL peak near 2.3 eV shows a clear blueshift, the magnitude of which depends on the thickness of the top SiO2 layer as the thickness of the c-Si layer shrinks to zero. The PL peaks observed from this structure are not related with the quantum con.nement eects; rather, they come from the SiO2 layers or the interface region between the c-Si and the SiO2 layers.f KCI Citation Count: 1