Effcective Mass of Dilute Two-Dimensional Holes in a GaAs Heterostructure

The eective mass of two-dimensional holes in GaAs has been measured in the dilute regime, where the system exhibits an apparent metal-insulator transition. The mass, determined from the temperature dependence of the Shubnikov-de Haas oscillation amplitudes, shows a strong depen-dence on density, decreasing from 0:8me to 0:4me as the hole density changes from 3 £ 1010 cm¡2 to 1:3 £ 1010 cm¡2. From the measurements under a strong in-plane magnetic ¯eld, it is found that the strong density dependence is related to the triplet interaction corrections. KCI Citation Count: 0