Asymmetry in voltage shift in Pt/Pb(Zr, Ti)Pt thin film capacitors

The change in the internal eld by heating imprinted Pt/PZT/Pt capacitors and by aging polarized capacitors has been investigated. The annealing temperature for the relaxation of the internal eld in imprinted capacitors increases as the Zr/Ti ratio decreases. The reorientation rate of the internal eld is almost independent of the Zr/Ti ratio. The positive internal eld is found to be larger than the negative field at a certain aging time. This asymmetric voltage shift indicates that the oxygen vacancy concentration near the top electrode is higher than near the bottom electrode. KCI Citation Count: 6