Source and Drain Formation by Using Plasma Doping and Laser Melt Annealing Technique for Deca-Nanometer SOI MOSFETs

The degradation of the carrier mobility in the channel region due to the high dopant scattering becomes a big issue in deca-nanometer MOSFET technology. Besides, the random locations of dopants cause serious threshold voltage variations in such small devices. Thus, fabrication of deca-nanometer size devices without channel doping is highly sought nowadays. In this paper we propose a novel fabrication method for ultra-thin SOI MOSFETs with plasma doping followed by excimer laser annealing as one of the promising candidates to achieve this goal. KCI Citation Count: 2