Extraction of Substrate Resistances of RF MOSFETs with Various Geometries
This paper proposes a simple and accurate method for extracting the substrate resistance of an RF Metal-oxide-semiconductor field-effect-transistor (MOSFET) from the measured network parameters. The extraction results for 0.18-m nMOSFETs are presented for various bias conditions and various geometri...
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| Veröffentlicht in: | Journal of the Korean Physical Society 2003, 42(III), , pp.224-228 |
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| Format: | Artikel |
| Sprache: | kor |
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| Online-Zugang: | Volltext |
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| Zusammenfassung: | This paper proposes a simple and accurate method for extracting the substrate resistance of
an RF Metal-oxide-semiconductor field-effect-transistor (MOSFET) from the measured network
parameters. The extraction results for 0.18-m nMOSFETs are presented for various bias conditions
and various geometries. The extracted results are veried by using the parameter for MOSFET
macro-modeling. KCI Citation Count: 1 |
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| ISSN: | 0374-4884 1976-8524 |