Transport Properties in Samples Containing InAs Self-Assembled Dots and Dashes

We report transport measurements of a two-dimensional electron gas (2DEG) formed in a GaAs/AlGaAs quantum well, in which InAs has been inserted into the centre of the GaAs quantum well. Depending on the capping layers, the InAs forms either self-assembled quantum dots or dashes, and due to the resulting strain fields repulsive short-range scattering is experienced by the conduction electrons in the 2DEG. The single electron transport is through a dot or dash isolated using a pair of split-gate deposited on the sample surface. By application of a source-drain voltage we investigate the energies of a dot or dash that is trapped within the one dimensional channel defined by the range 0.5-2 meV. We speculate that the dot and dash are formed by strain modulation of the conduction of the conduction band in the GaAs quantum well. KCI Citation Count: 1