Growth-Temperature Dependent Property of GaN Barrier Layer and Its Effect on InGaN/GaN Multiple Quantum Well Light-Emitting Diodes

The eects of the growth temperature for GaN barrier layers on the characteristics of InGaN/GaNmultiple quantum wells (MQWs) grown by using metalorganic chemical vapor deposition wereinvestigated. The improvement in the electrical properties of MQW light-e1mitting diodes withincreasing barrier growth temperature from 700 to 840 C is attributed to a decrease in the numberof deep-level-related defects in the barrier layers. The interfaceatness and the structural propertiesin the MQWs were signicantly improved with increasing barrier-layer growth temperature and areattributed to an increase in the in-plane domain size and to the atomic stacking order in GaNbarrier layers. The eects of the growth temperature for GaN barrier layers on the characteristics of InGaN/GaN multiple quantum wells (MQWs) grown by using metalorganic chemical vapor deposition were investigated. The improvement in the electrical properties of MQW light-e1mitting diodes with increasing barrier growth temperature from 700 to 840 C is attributed to a decrease in the number of deep-level-related defects in the barrier layers. The interface atness and the structural properties in the MQWs were signicantly improved with increasing barrier-layer growth temperature and are attributed to an increase in the in-plane domain size and to the atomic stacking order in GaN barrier layers. KCI Citation Count: 10