Long-Pulse Excimer Laser Crystallization and Doping for the Fabrication of High Performance Polysilicon TFTs

Excimer laser processing appears very promising to prepare at low temperature high quality polysilicon TFTs for active matrix display applications. In this work, the specific advantages of a large area (20 cm2) and long-pulse duration (200 ns) excimer source (VEL from SOPRA) both for crystallization of the silicon thin film (50 . 100 nm) on SiO2-coated glass substrates and for doping of source and drain regions of the TFT, are reviewed._? KCI Citation Count: 13