The Effect of the Partial Pressure of H2 Gas and Atomic Hydrogen on Diamond Film Deposited Using CH3OH/H2O Gas

Diamond films were deposited on Si(100) substrates by hot filament chemical vapor deposition (HFCVD) with a CH3OH/H2O gas mixture while changing the gas ratio. The films were analyzed with scanning electron microscopy (SEM), Raman spectroscopy, and optical emission spectroscopy (OES). The diamond films were grown with CH3OH being 52 % by volume of the gas mixture. The effect of atomic hydrogen on the film was different from that of the CH4/H2 gas mixture. Analysis with OES during film growth indicated that among the thermally dissociated hydrogen radicals, only H contributed to the etching of graphite. KCI Citation Count: 0