Carrier Gas Effects on Copper Films Deposited from (hfac)Cu(DMB)(3,3-dimethyl-1-butene) by Using MOCVD

The deposition characteristics of copper formed by using metal-organic chemical vapor deposition (MOCVD) with (hfac)Cu(1,5-DMB)(3,3-dimethyl-1-butene) as a precursor were investigated in terms of adding H2, H(hfac), or C2H5I to the Ar carrier gas stream. Adsorbed H and I atoms played a role as a catalyst in improving the deposition rate and the resistivity. Compared to other carrier gas systems, use of a C2H5I carrier gas system led to the highest MOCVD Cu deposition rate and the lowest film resistivity. This was the result of reduced surface roughness and larger grain size. An inductively coupled plasma of H2 enhanced the conformality of trench lling with a width of 0.3 m and an aspect ratio of 7:1 at low temperatures. Cu lms with a low resistivity and conformal trench lling have, thus, been obtained below the transition temperature of 160 C by manipulating the carrier gas system and the plasma treatment. KCI Citation Count: 12