Calculation of Reactor Chamber Resistance of Inductively Coupled Plasma Source

The stray resistance related to the rising of the temperature of the chamber or the substrate is calculated for a planar-type inductively coupled plasma (ICP) source. Firstly, electromagnetic fields are calculated at the chamber surface based on the previously developed electron heating theory and calculating the wave equation in the antenna region. With the calculated effective surface current or tangential magnetic field at the chamber surface, a tractable form of the stray resistance is obtained as a function of various plasma and geometrical parameters and is applied in carrying out a parametric study. The results show that the stray resistance can be even higher than the plasma resistance under specific geometrical conditions, but the dependence of the power transfer coefficient on the geometrical parameters is relatively less sensitive The stray resistance related to the rising of the temperature of the chamber or the substrate is calculated for a planar-type inductively coupled plasma (ICP) source. Firstly, electromagnetic fields are calculated at the chamber surface based on the previously developed electron heating theory and calculating the wave equation in the antenna region. With the calculated effective surface current or tangential magnetic field at the chamber surface, a tractable form of the stray resistance is obtained as a function of various plasma and geometrical parameters and is applied in carrying out a parametric study. The results show that the stray resistance can be even higher than the plasma resistance under specific geometrical conditions, but the dependence of the power transfer coefficient on the geometrical parameters is relatively less sensitive KCI Citation Count: 6