Electrical Properties of SrTiO3-Interlayered PZT Films by Combining Thick and Thin Film Technology

A heterolayered thick/thin structure consisting of Pb(Zr0.52Ti0.48)O3 (PZT) and SrTiO3(ST) was fabricated by using a sol-gel process. We investigated the effect of the phase, the composition, and the interfacial state of the SrTiO3 thin-film layer at the interface between PZT thick films. The structural and the dielectric properties were investigated to establish the effect of various stacking sequence of the sol-gel-prepared SrTiO3 layer at the interface of PZT thick films. The insertion of a SrTiO3 interlayer yielded PZT thick films with a homogeneous and dense grain structure, regardless of the number of SrTiO3 layers. These results suggest that a PZT phase and either a SrTiO3 phase or a modified SrTiO3 phase coexist at the interfaces between PZT thick films. The leakage current density of the PZT/SrTiO3-7 film is less the 1.7 × 10.9 A/cm2 at 5 V. KCI Citation Count: 1