Enhanced Photoluminescent Properties of Laser-Ablated Y0.57Gd0.4VO4:Eu3+ Thin Films Produced by Using Li-Doping

Y$_0$$_.$$_5$$_7$Gd$_0$$_.$$_4$VO$_4$:Eu$^3$$^+$ and Li-doped Y$_0$$_.$$_5$$_7$Gd$_0$$_.$$_4$VO$_4$:Eu$^3$$^+$ thin film phosphors have been grown on Al$_2$O$_3$ (0001) substrates by using a pulsed-laser deposition. The effect of the Li$^+$ ion on the crystallization behavior, the morphology, and the luminescence property of Y$_0$$_.$$_5$$_7$Gd$_0$$_.$$_4$VO$_4$:Eu$^3$$^+$ was investigated. Li-doping led to a remarkable increase of photoluminescence, and the intensity at 619 nm was increased by a factor of 1.7 times in comparison with that of the undoped sample. The enhanced luminescence was regarded as resulting not only from the improved crystallinity but also from the reduced internal reflections caused by rougher surfaces. The Li-doped Y$_0$$_.$$_5$$_7$Gd$_0$$_.$$_4$VO$_4$:Eu$^3$$^+$ thin film phosphor with highly enhanced luminescence is very encouraging for applications in display devices. KCI Citation Count: 4