Patterned Growth of a Vertically Aligned Zinc Oxide Rod Array on a Gallium Nitride Epitaxial Layer by Using a Hydrothermal Process

A patterning method has been applied for the controlled growth of ZnO rod arrays on GaN epitaxial layers, which were deposited using Metal Organic Chemical Vapor Deposition (MOCVD) and the ZnO structure is fabricated by using the self-assembly hydrothermal process with zinc nitrate and Diethylenetriamine (DETA) solutions. In order to control the position and distribution density of the ZnO rods, the exposed GaN is defined, as regular arrays, with the assistance of photolithography. The selectively grown ZnO rods are single crystalline and have rod axis along the hexagonal c-axis. A regular array of vertical ZnO rods was achieved on GaN in the present work. The growth direction of the ZnO rod was consistent with that of GaN. The density and the sizes of ZnO rods could be controlled by the pattern. The hetero junction structure between the GaN and the ZnO rod may be applied as high-efficiency opto-electric devices. KCI Citation Count: 3