Effects of Gate Bias Stress on the Electrical Characteristics of ZnO Thin Film Transistor

The electrical stability of ZnO thin film transistors (TFTs) has been investigated. The results of stress test on a ZnO TFT differed from those on an a-Si:H TFT. Therefore, the instability of the ZnO TFT cannot be explained with the conventional degradation mechanisms of an a-Si:H TFT. We fabricated...

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Veröffentlicht in:	Journal of the Korean Physical Society 2008, 53(1), , pp.412-415
Hauptverfasser:	Jeon, Jae-Hong, Choe, Hee-Hwan, Lee, Kang-Woong, Shin, Jae-Heon, Hwang, Chi-Sun, Park, Sang-Hee Ko, Seo, Jong-Hyun
Format:	Artikel
Sprache:	eng
Schlagworte:	물리학
Online-Zugang:	Volltext
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Zusammenfassung:	The electrical stability of ZnO thin film transistors (TFTs) has been investigated. The results of stress test on a ZnO TFT differed from those on an a-Si:H TFT. Therefore, the instability of the ZnO TFT cannot be explained with the conventional degradation mechanisms of an a-Si:H TFT. We fabricated ZnO TFTs by varying key factors related to the electrical stability. With the results of various bias tests, possible mechanisms for the abnormal behavior under gate bias stress are discussed. KCI Citation Count: 11
ISSN:	0374-4884 1976-8524
DOI:	10.3938/jkps.53.412