Molecular Beam Epitaxy Growth of ZnTe/ZnSe Type-II Quantum Dots

We have performed a detailed study of the growth conditions of ZnTe strained on ZnSe to form nanometer-scale islands. We determined that the critical thickness for strain relaxation was 2 ML, rapidly followed by the onset of surface undulations due to a layer instability. Nevertheless, the changes in the surface morphology were not marked enough if the purpose was to obtain quantum dots. Finally, we present an ecient technique to form ZnTe islands with a typical base extension of 25 nm and a height of 3 nm. KCI Citation Count: 0