Preparation of ITO Thin Film by Using DC Magnetron Sputtering

Transparent films with low resistivity have been intensively investigated for display device applications, such as flat panel displays, solar cells and touch panels, because of their electrodes having low resistivity and high transparency. In this study, the optical and the electrical properties of ITO films synthesized by using a DC magnetron sputtering system with an ITO (SnO2 : 10 wt.%) target onto a glass, polycarbonate (PC) substrate at various oxygen gas flow rates were investigated and the surface morphologies of ITO thin films prepared at various film thicknesses were measured. As a result, ITO thin films could be prepared with resistivity of 5 ∽ 8 × 10-4 Ω-cm and a transmittance of 85 % at a wavelength of 550 nm. KCI Citation Count: 19