Luminescence Properties of Mn2+-Doped Zn2SiO4 Thin Films Grown by Using Pulsed Laser Deposition

Zn2SiO4:Mn2+ luminescent thin films were grown on Al2O3 (0001) substrates by using a pulsed laser deposition technique at substrate temperature of 600 ℃ under various oxygen pressures of 100, 200, 250, 300, 350 and 400 mTorr. The mechanism for the enhanced efficiency of the green emission from the Zn2SiO4:Mn2+ thin lms was investigated for various oxygen pressures. The crystallization, the surface morphology and the luminescent properties of Zn2SiO4:Mn2+ thin films are very dependent on the variation in the oxygen pressure. The enhanced luminescence for Zn2SiO4:Mn2+ thin films at an oxygen pressure of 400 mTorr may result not only from the improved crystallinity but also from reduced internal reflections caused by rougher surfaces. Also, the luminescent intensity and the surface roughness of the lms exhibited similar behaviors as functions of the oxygen pressure. KCI Citation Count: 2