Charging Effect of a Nano-Floating Gate Capacitor with Double-Layered Au Nano-Particles

A nano-floating gate capacitor with double-layered Au nano-particles embedded in a SiO1:3N layer was fabricated and characterized. The Au nano-particles were formed from Au thin film with a nominal thickness of 1 nm and their average size and density were about 4 nm and 2 × 1012 cm-2, respectively. After the post-annealing process at 800 ℃ for 10 s, the flat-band voltage shift of the nano-floating gate capacitor with double-layered Au nano-particles was about 9 V when the applied gate voltage was swept from -10 V to +10 V. Signicantly, the flat-band voltage shifts were improved after the post-annealing process. The double-layered Au nano-particles embedded in a SiO1:3N dielectric showed feasibility as nano-floating gate capacitors for nonvolatile memories. KCI Citation Count: 2