Homoepitaxial Growth of Iron-Doped 4H-SiC by Using Bis-trimethylsilylmethane and Ferrocene Precursors

In this paper, we attempted to grow semi-insulating SiC epitaxial layer by in-situ iron doping. Homoepitaxial growth of iron-doped 4H-SiC layer was performed by MOCVD by using organosilicon precursor, bis-trimethylsilylmethane (BTMSM, [C7H20Si2]) and metal-organic precursor, bis-cyclopentadienyliron...

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Veröffentlicht in:Journal of the Korean Physical Society 2005, 47(3), , pp.508-511
Hauptverfasser: 송호근, Hoon Joo Na, Sang Yong Jung, Jeong Hyun Moon, 임정혁, Jong Ho Lee, 김형준, 류성룡, 강태원
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Sprache:eng
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Zusammenfassung:In this paper, we attempted to grow semi-insulating SiC epitaxial layer by in-situ iron doping. Homoepitaxial growth of iron-doped 4H-SiC layer was performed by MOCVD by using organosilicon precursor, bis-trimethylsilylmethane (BTMSM, [C7H20Si2]) and metal-organic precursor, bis-cyclopentadienyliron (Ferrocene, [C10H10Fe]). The crystal quality of the epilayer was not degraded signicantly, despite Fe doping, in that no changes were observed in RMS roughness and FWHM of the X-ray rocking curve. From I-V and C-V measurements, it is shown that the residual donor concentration of the epilayer was decreased by more than two orders of magnitude after Fe doping. Moreover, photoluminescence spectra showed similar results to V-doped semi-insulating SiC substrate. From these results, it is proposed that Fe eectively acts as a compensation center in the in-situ iron-doped 4H-SiC. KCI Citation Count: 2
ISSN:0374-4884
1976-8524