Programming/Erasing Characteristics of 45 nm NOR-Type Flash Memory Based on SOI FinFET Structure
A novel NOR-type ash memory structure, based on SOI FinFET, is proposed for high-density and high-performance ash memories. This ash memory structure has oating gate on both sides of the fin body. To know the characteristics of this device, device simulation was performed extensively. We examined th...
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Veröffentlicht in: | Journal of the Korean Physical Society 2005, 47(3), , pp.564-567 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | A novel NOR-type ash memory structure, based on SOI FinFET, is proposed for high-density and high-performance ash memories. This ash memory structure has
oating gate on both sides of the fin body.
To know the characteristics of this device, device simulation was performed extensively.
We examined the programming/erasing characteristics depending on the coupling ratio (CR). The etching depth of buried oxide (BOX) layer and the oating-gate height were changed for different CR. By controlling the
oating-gate height, we could obtain CR higher than 0.6. Regardless of the CR,
the threshold-voltage (Vth) shift for programming was very small. However, erasing time due to Fowler-Nordheim (FN) was signicantly reduced on increasing the CR. KCI Citation Count: 6 |
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ISSN: | 0374-4884 1976-8524 |