Optical Properties of (Ga1-xMnx)N Thin Films with a Low Mn Concentration Grown on GaN Buffer Layers

The optical properties of (Ga1..xMnx)N thin lms with a low Mn concentration grown on GaNbuffers by using molecular beam epitaxy were investigated. The magnetization curve as a function of magnetic feld at 5 K indicated that ferromagnetism existed in the (Ga1..xMnx)N thin lms, and the magnetization curve as a function of temperature showed that the Curie temperature (Tc) of the (Ga1..xMnx)N thin lm was above room temperature. Photoluminescence spectra measured at several temperatures showed band-edge exciton transitions in (Ga1..xMnx)N thin flms with diluted magnetic semiconductor properties and a Tc value above room temperature, indicative of the Mn atoms acting as substitution. These results indicate that (Ga1..xMnx)N thin lms hold promise for potential applications in spintronic devices in the blue region of the spectrum. KCI Citation Count: 4