Hot-wire CVD Grown Microcrystalline Silicon Films with and without Initial Growing Layer

Microcrystalline Si (c-Si) lms have been deposited by using hot-wire chemical vapor deposition (HWCVD) with ve W wire laments of 0.5 mm in diameter. We compared the HWCVD-grown lms with the lm exposed to an inductively coupled plasma system for modication of the seed layer. The W-wire lament temperature was maintained below 1600 C to avoid metal contamination by thermal evaporation of the lament. The deposition conditions were varied, including the H2 dilution ratio, with and without a plasma treatment. From the Raman analysis, we observed that the lm crystallinity was strongly in uenced by the H2 dilution ratio and was weakly aected by the distance between the wire and the substrate. We were able to achieve a crystalline volume fraction of about 70 % with a SiH4/H2 ratio of 1.3 %, a wire temperature of 1514 C, a substrate distance of 4 cm, and a chamber pressure of 38 mTorr. We investigated the in uence of a c-Si seed layer by using plasma treatment. This article also deals with the in uence of the H2 dilution ratio in crystallinity modication. KCI Citation Count: 0