Electron Emission from Robust CNTs Grown by Resist-Assisted Patterning

We developed novel carbon-nanotube field-emitter arrays (CNT-FEAs) with a resist-assisted patterning process using dc-plasma enhanced chemical vapor deposition (PECVD). Through this method, we obtained a CNT very strongly bonded to the substrate. The CNTs were grown at -600 V bias to the substrate electrode and a +300 V bias to the mesh grid, being placed 10 mm above the substrate holder electrode. The structure and the electrical properties of the CNTs were strongly related to the growth time. The length was decreased after 80-minute and the diameter increased with the growth time. The electron emission current increased with growth time. The growth mechanism, the electron emission characteristics and the mechanical robustness are discussed. We developed novel carbon-nanotube field-emitter arrays (CNT-FEAs) with a resist-assisted patterning process using dc-plasma enhanced chemical vapor deposition (PECVD). Through this method, we obtained a CNT very strongly bonded to the substrate. The CNTs were grown at -600 V bias to the substrate electrode and a +300 V bias to the mesh grid, being placed 10 mm above the substrate holder electrode. The structure and the electrical properties of the CNTs were strongly related to the growth time. The length was decreased after 80-minute and the diameter increased with the growth time. The electron emission current increased with growth time. The growth mechanism, the electron emission characteristics and the mechanical robustness are discussed. KCI Citation Count: 4