Combinatorial Approach to the Fabrication of Zinc-Tin-Oxide Transparent Thin-Film Transistors

Zn-Sn-O (ZTO) thin films were prepared for channels in top-gate transparent thin-film transistors (TTFTs). Thin ZTO films (∼20 nm) with a wide range of compositions could be easily formed by using a combinatorial method with two RF magnetron sputter guns equipped with ZnO and SnO2 targets. Specially, ZTO-TTFTs could be fabricated by using low thermal processes at temperatures below 300 ℃, where electrical properties were improved by controlling both the deposition rate and the temperature. In ZTO films with a compositional zone from [Zn : Sn = ∼4 : 1] to [Zn : Sn = ∼2 : 1] and amorphous-like structures, reliable transfer plots with high Ion/Ioff ratios (>107) could be obtained. KCI Citation Count: 9