High-current Electro-optical Degradation of InGaN/GaN Light-emitting Diodes Fabricated with Ag-based Reflectors

We have investigated the degradation of the optical power and the operating voltage of InGaN/GaN light-emitting diodes (LEDs) fabricated with Ag-based reflectors during electrical and thermal stress. As the electrical stress increased from 50 mA to 200 mA at a thermal stress of 100℃, the optical pow...

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Veröffentlicht in:Journal of the Korean Physical Society 2009, 55(3), , pp.1128-1131
Hauptverfasser: Seong-Min Moon, Joon Seop Kwak
Format: Artikel
Sprache:eng
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Zusammenfassung:We have investigated the degradation of the optical power and the operating voltage of InGaN/GaN light-emitting diodes (LEDs) fabricated with Ag-based reflectors during electrical and thermal stress. As the electrical stress increased from 50 mA to 200 mA at a thermal stress of 100℃, the optical power was significantly reduced. The decrease in optical power was closely correlated to a rapid increase in operating voltage due to an increase in the parasitic series resistance during the accelerated current aging test. KCI Citation Count: 10
ISSN:0374-4884
1976-8524
DOI:10.3938/jkps.55.1128