High-current Electro-optical Degradation of InGaN/GaN Light-emitting Diodes Fabricated with Ag-based Reflectors
We have investigated the degradation of the optical power and the operating voltage of InGaN/GaN light-emitting diodes (LEDs) fabricated with Ag-based reflectors during electrical and thermal stress. As the electrical stress increased from 50 mA to 200 mA at a thermal stress of 100℃, the optical pow...
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Veröffentlicht in: | Journal of the Korean Physical Society 2009, 55(3), , pp.1128-1131 |
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Hauptverfasser: | , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We have investigated the degradation of the optical power and the operating voltage of
InGaN/GaN light-emitting diodes (LEDs) fabricated with Ag-based reflectors during electrical
and thermal stress. As the electrical stress increased from 50 mA to 200 mA at a thermal stress
of 100℃, the optical power was significantly reduced. The decrease in optical power was closely
correlated to a rapid increase in operating voltage due to an increase in the parasitic series
resistance during the accelerated current aging test. KCI Citation Count: 10 |
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ISSN: | 0374-4884 1976-8524 |
DOI: | 10.3938/jkps.55.1128 |