Optical Absorption Studies of GaSbN Grown by Using Liquid Phase Epitaxy

Optical absorption measurements were performed on GaSbN semiconductors with nitrogen concentrations in the layers ranging from 0.9 to 1.7%. The surface morphology was examined by using an atomic force microscope. The X-ray diffraction measurements confirmed the nitrogen concentrations in the layers. The reduction of the band gap with increasing amount of nitrogen in the layers was confirmed by their optical band edge absorption in the Fourier-transform infrared spectroscopy measurements. The absorption spectrum of the GaSbN semiconductor with a nitrogen concentration of 1.7% was fitted using the band anticrossing model (BAC) model. KCI Citation Count: 1