Temperature Effect of a Si-Doped MgO Protective Layer on the Discharge Characteristics of an AC-PDP

This article reports misfiring and discharge time lag properties as well as temperature- dependent voltages and jitter of an AC-PDP, related to the effect of a small amount of Si doping in the MgO protecting layer. In order to improve misfiring and discharge time lag properties in high and low temperature, Si-doped MgO pellets was used while the MgO layer was being deposited on 4-inch test panels using an electron-beam evaporation method. When the temperature was much higher or lower than room temperature (20 ˚C), the voltage difference between the sustain voltage Vs and the firing voltage Vf increased. The results can probably be attributed to a change in the secondary electron emission coefficient caused by a change in the energy band structure and the surface properties. With the tmperature variation, the discharge time lag of the Si-doped MgO layer decreases compared with pure MgO. KCI Citation Count: 0