Luminescence Properties of Eu2+-and Eu3+-activated BaSi2O5 Phosphor Thin Films Grown by Using Pulsed Laser Deposition

BaSi2O5:Eu2+ thin films have been grown on Al2O3 (0001) substrate by using the pulsed laser deposition technique at a substrate temperature of 650 ˚C under various oxygen pressures. The enhancement emission mechanism of the blue to red color from BaSi2O5:Eu2+ phosphor to BaSi2O5:Eu3+ thin films by v...

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Veröffentlicht in:Journal of the Korean Physical Society 2009, 55(5), , pp.1965-1968
Hauptverfasser: 정종원, 양현경, 문병기, 최병춘, Jung Hyun Jeong, Soung Soo Yi, 장기완, 이호섭
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Sprache:eng
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Zusammenfassung:BaSi2O5:Eu2+ thin films have been grown on Al2O3 (0001) substrate by using the pulsed laser deposition technique at a substrate temperature of 650 ˚C under various oxygen pressures. The enhancement emission mechanism of the blue to red color from BaSi2O5:Eu2+ phosphor to BaSi2O5:Eu3+ thin films by varying the oxygen pressure have been investigated. The crystallization, surface morphology and luminescent properties of the BaSi2O5:Eu3+ thin films depend on the oxygen pressure. The optimized emission was obtained at a 300-mTorr oxygen pressure, and that optimize emission may result not only from the improved crystallinity but also from the reduced internal reflections caused by the rougher surfaces. Moreover, the luminescent intensity and the surface roughness of the films as functions of the oxygen pressure exhibit similar behaviors. KCI Citation Count: 3
ISSN:0374-4884
1976-8524
DOI:10.3938/jkps.55.1965