Luminescence Properties of Eu2+-and Eu3+-activated BaSi2O5 Phosphor Thin Films Grown by Using Pulsed Laser Deposition
BaSi2O5:Eu2+ thin films have been grown on Al2O3 (0001) substrate by using the pulsed laser deposition technique at a substrate temperature of 650 ˚C under various oxygen pressures. The enhancement emission mechanism of the blue to red color from BaSi2O5:Eu2+ phosphor to BaSi2O5:Eu3+ thin films by v...
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Veröffentlicht in: | Journal of the Korean Physical Society 2009, 55(5), , pp.1965-1968 |
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Hauptverfasser: | , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | BaSi2O5:Eu2+ thin films have been grown on Al2O3 (0001) substrate by using the pulsed
laser deposition technique at a substrate temperature of 650 ˚C under various oxygen pressures.
The enhancement emission mechanism of the blue to red color from BaSi2O5:Eu2+ phosphor to
BaSi2O5:Eu3+ thin films by varying the oxygen pressure have been investigated. The crystallization,
surface morphology and luminescent properties of the BaSi2O5:Eu3+ thin films depend on the
oxygen pressure. The optimized emission was obtained at a 300-mTorr oxygen pressure, and that
optimize emission may result not only from the improved crystallinity but also from the reduced
internal reflections caused by the rougher surfaces. Moreover, the luminescent intensity and the
surface roughness of the films as functions of the oxygen pressure exhibit similar behaviors. KCI Citation Count: 3 |
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ISSN: | 0374-4884 1976-8524 |
DOI: | 10.3938/jkps.55.1965 |