Optical Investigations of Non-polar m-plane InGaN/GaN Multiple Quantum Wells Grown on LiAlO2 (100) by Using MOVPE

We investigate the optical properties of m-plane InGaN/GaN multiple quantum wells (MQWs) grown on LiAlO2 substrates by using metal organic vapor phase epitaxy (MOVPE). Polarizationdependent photoluminescence (PL) measurements have been employed to study the optical emission characteristics. We demonstrate that the PL emission has a large polarization anisotropy, which can be attributed to the anisotropic in-plane strain. The degree of polarization is studied as a function of temperature, and the dependence can be explained by using the modified band structure model. The energy splitting of the two uppermost valence bands is obtained from polarized PL spectroscopy and is in good agreement with the activation energy deduced from the Arrhenius relationship. From the excitation-dependent PL measurements, we found the optical emission not to be influenced by the polarization-induced electric field. Our results are important for the design and the fabrication of non-polar InGaN/GaN MQW polarization-sensitive optical devices KCI Citation Count: 4