Optical Properties of Self-assembled InAs Quantum-dot Superluminescent Diodes
We report broad-band superluminescent diodes (SLDs) with different active layers using a selfassembled InAs quantum-dot (QD) structure grown by using atomic layer molecular beam epitaxy. The photoluminescence and the electroluminescence measurements show a relationship between the emission propertie...
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| Veröffentlicht in: | Journal of the Korean Physical Society 2009, 55(1), , pp.24-27 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
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| Online-Zugang: | Volltext |
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| Zusammenfassung: | We report broad-band superluminescent diodes (SLDs) with different active layers using a selfassembled InAs quantum-dot (QD) structure grown by using atomic layer molecular beam epitaxy.
The photoluminescence and the electroluminescence measurements show a relationship between the emission properties and different activelayer structures of the QD-SLD These results explain the possibility of QD-based SLDs exceeding the performance of quantumwell-based SLDs. KCI Citation Count: 1 |
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| ISSN: | 0374-4884 1976-8524 |
| DOI: | 10.3938/jkps.55.24 |