Activation Studies of Si-Implanted Al0.45Ga0.55N by Using Cathodoluminescence and Temperature-Dependent Hall-Effect Measurements

Both optical and electrical activation studies of Si-implanted Al0.45Ga0.55N for n-type conductivity have been made as a function of the ion dose and the anneal temperature by using cathodoluminescence (CL) and temperature-dependent Hall-effect measurements. Silicon ions were implanted at 200 keV with doses ranging from 1 × 1014 to 1 × 1015 cm−2 at room temperature. The samples were subsequently annealed from 1150 to 1350 ˚C for 20 min in a nitrogen environment. The CL intensity of the near band emission increased as the annealing temperature was increased, showing a successive implantation damage recovery. These CL results coincide well with the results of the annealing temperature-dependent electrical activation study. The carrier concentration (activation efficiency) and the Hall mobility also increase with increasing annealing temperature. KCI Citation Count: 0