Organic Metal-semiconductor Field-effect Transistors Using Aluminum-pentacene Schottky Junctions

We fabricated an organic thin-film field-effect transistor (FET) using pentacene as a channel material. An Al gate electrode was deposited directly on the pentacene channel without an insulating layer. This was possible due to the Schottky barrier formed at the Al/pentacene interface and the ohmic contact at the pentacene/Au contact, which was verified from the rectifying current-voltage curve measured from the Al/pentacene/Au sample. The mobility of the Al/pentacene gate FET was comparable to that of the pentacene/SiO2/Si gate FET. We fabricated an organic thin-film field-effect transistor (FET) using pentacene as a channel material. An Al gate electrode was deposited directly on the pentacene channel without an insulating layer. This was possible due to the Schottky barrier formed at the Al/pentacene interface and the ohmic contact at the pentacene/Au contact, which was verified from the rectifying current-voltage curve measured from the Al/pentacene/Au sample. The mobility of the Al/pentacene gate FET was comparable to that of the pentacene/SiO2/Si gate FET. KCI Citation Count: 5