Transformation of In Grains to InN Nanoshells with In_2O_3 as an Intermediate State under a N_2-NH_3 Ambient
InN nanoshells were fabricated by using nitridation of In grains sputtered on sapphire substrates. The X-ray diffraction intensities of the sputtered In grains measured before and after nitridation show that In grains were seemingly transformed directly to InN, but further microstructural analysis r...
Gespeichert in:
Veröffentlicht in: | Journal of the Korean Physical Society 2011, 58(1), , pp.49-52 |
---|---|
Hauptverfasser: | , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | InN nanoshells were fabricated by using nitridation of In grains sputtered on sapphire substrates. The X-ray diffraction intensities of the sputtered In grains measured before and after nitridation show that In grains were seemingly transformed directly to InN, but further microstructural analysis revealed that the transformation of In to InN involved In_2O_3 as an intermediate phase. Our result illustrates that the oxidation of the In grains at low temperatures was more favored than the nitridation process and that the fabrication of InN from the pure In grains under an atmospheric thermal process might inevitably follow this two-step pathway. InN nanoshells were fabricated by using nitridation of In grains sputtered on sapphire substrates. The X-ray diffraction intensities of the sputtered In grains measured before and after nitridation show that In grains were seemingly transformed directly to InN, but further microstructural analysis revealed that the transformation of In to InN involved In_2O_3 as an intermediate phase. Our result illustrates that the oxidation of the In grains at low temperatures was more favored than the nitridation process and that the fabrication of InN from the pure In grains under an atmospheric thermal process might inevitably follow this two-step pathway. KCI Citation Count: 0 |
---|---|
ISSN: | 0374-4884 1976-8524 |