Effects of In-situ Doping on the Electrical and the Optical Characteristics of Anodized Polycrystalline 3C-SiC Thin Films Fabricated Using Chemical Vapor Deposition with a Single Precursor of Hexamethyldisilane

This paper presents the electrical, chemical and optical characteristics of porous 3C-SiC (pSiC)for various in-situ N2 doping flow rates. N-type polycrystalline (poly) 3C-SiC thin films were grown on p-type Si (100) wafers by using atmospheric-pressure chemical vapor deposition (APCVD). N_2(0 ~ 40 sccm) was used as the doping source gas, and the pSiC was fabricated by using anodization. The anodization current density and time were adjusted to 7.1 mA/cm^2 and 60 sec, respectively. The average pore diameter of the 10-sccm-doped sample was about 40 nm, and the etched area increased with increasing N_2 flow rate. The electron mobility of the pSiC dramatically decreases from 648 to 4.3 cm^2/V·S with increasing N_2. The properties of the pSiC layer formed by using this method were investigated by using scanning electron microscopy (SEM), X-ray diffraction (XRD),Fourier transform infrared spectroscopy (FT-IR) and photoluminescence (PL). The results show that the thin film and the pSiC were crystalline and that the PL spectra exhibited blue band emissions centered at 495 nm (2.5 eV) and 470 nm (2.7 eV), respectively. KCI Citation Count: 0