Stability of Solution-processed ZrInZnO Thin-film Transistors under Gate Bias Stress

The effects of bias stress solution-processed ZrInZnO (ZIZO) thin-film transistors (TFTs) for various annealing temperatures and gate insulators were investigated under gate bias stress. In the as-fabricated ZIZO TFTs with different gate insulators, higher mobility is achieved with SiNx, but superior subthreshold swing (S.S) is achieved with SiO_2 because the gate insulator has different k value and quality. After 1000 s of positive and negative gate bias stresses, the threshold voltages of the ZIZO TFTs with SiNx and SiO_2 gate insulators shifted dramatically while variations in the S.S and the mobility changed slightly. This suggests that electrons or holes are temporarily trapped/detrapped at the existing traps in the gate insulator, semiconductor, or channel/insulator. KCI Citation Count: 0