Measurement of Radiation Damage on a Back-illuminated Silicon PIN Photodiode Caused by a 35 MeV Proton Beam

We develop a backside illuminated photo-sensor that is fabricated on a -oriented, high resistivity n-type 400 μm thick silicon wafer. The PIN photodiode is designed and manufactured as a radiation detector for alpha particles and low energy gamma-rays. The silicon photo-sensor is susceptible to radiation damage. Therefore, it is important to investigate the effects of radiation damage to the fabricated PIN photodiode. We measure the radiation damage to a PIN photodiode by a 35 MeV proton beam at the Korea Institute of Radiological and Medical Sciences (KIRAMS). We present the effects of proton radiation on the electrical properties of the PIN photodiode. KCI Citation Count: 2