Preparation and properties of Sb2O3-doped SnO2 thin films deposited by using PLD

Transparent conducting oxides (TCOs) are key materials in optoelectronic devices applications, such as flat-panel displays, touch panel, heat mirrors, gas sensor, light-emitting diodes and solar cell. In this study, the Sb 2 O 3 -doped SnO 2 films have been deposited on glass substrates by using the pulsed laser deposition (PLD) method. The structural, electrical, and optical properties of these films have been studied as functions of the dopingconcentration, oxygen partial pressure, film thickness, and substrate temperature during deposition. The structural properties of films were analyzed by using X-ray diffraction (XRD). The electrical and the optical properties were checked by using a four probe sheetresistance, Hall measurement system and an UV-VIS-NI spectrometer, respectively. Under optimized deposition conditions (6 wt% Sb 2 O 3 , T s = 500 °C, and 60 m Torr of O 2 and film thickness at 700 nm). The optimized films had an electrical resistivity of 1.3 × 10 −3 Ω·cm, a carrier concentration of 2.3 × 10 20 cm −3 , a Hall mobility of 20.1 cm 2 v −1 s −1 and an average optical transmittance of over 80% in the visible range.