Pressure-induced metal-insulator transition of the mott insulator Ba2IrO4
The electrical resistivity of single crystals of the spin-orbit Mott insulator Ba 2 IrO 4 has been measured at pressures up to 30 GPa and at temperatures from 100 mK to 300 K. Ba 2 IrO 4 shows a metal-insulator transition at around P c = 24 GPa, though it does not show superconductivity down to 100...
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Veröffentlicht in: | Journal of the Korean Physical Society 2013, 63(3), , pp.349-351 |
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Hauptverfasser: | , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The electrical resistivity of single crystals of the spin-orbit Mott insulator Ba
2
IrO
4
has been measured at pressures up to 30 GPa and at temperatures from 100 mK to 300 K. Ba
2
IrO
4
shows a metal-insulator transition at around
P
c
= 24 GPa, though it does not show superconductivity down to 100 mK. The low-temperature resistivity in the metallic state does not obey a conventional Fermi-liquid description. This suggests that carriers are incoherently scattered by antiferromagnetic quantum spin fluctuations. The critical exponent
δ
for the metal-insulator transition is about 1.6, indicating that Ba
2
IrO
4
is located near the boundary between a Mott and an Anderson insulator. This means that even in a single crystal, the effect of crystallographic disorder should not be ignored. |
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ISSN: | 0374-4884 1976-8524 |
DOI: | 10.3938/jkps.63.349 |