Pressure-induced metal-insulator transition of the mott insulator Ba2IrO4

The electrical resistivity of single crystals of the spin-orbit Mott insulator Ba 2 IrO 4 has been measured at pressures up to 30 GPa and at temperatures from 100 mK to 300 K. Ba 2 IrO 4 shows a metal-insulator transition at around P c = 24 GPa, though it does not show superconductivity down to 100...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of the Korean Physical Society 2013, 63(3), , pp.349-351
Hauptverfasser: Orii, Daisuke, Sakata, Masafumi, Miyake, Atsushi, Shimizu, Katsuya, Okabe, Hirotaka, Isobe, Masaaki, Takayama-Muromachi, Eiji, Akimitsu, Jun
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The electrical resistivity of single crystals of the spin-orbit Mott insulator Ba 2 IrO 4 has been measured at pressures up to 30 GPa and at temperatures from 100 mK to 300 K. Ba 2 IrO 4 shows a metal-insulator transition at around P c = 24 GPa, though it does not show superconductivity down to 100 mK. The low-temperature resistivity in the metallic state does not obey a conventional Fermi-liquid description. This suggests that carriers are incoherently scattered by antiferromagnetic quantum spin fluctuations. The critical exponent δ for the metal-insulator transition is about 1.6, indicating that Ba 2 IrO 4 is located near the boundary between a Mott and an Anderson insulator. This means that even in a single crystal, the effect of crystallographic disorder should not be ignored.
ISSN:0374-4884
1976-8524
DOI:10.3938/jkps.63.349