Conductive-bridging random-access memory cell fabricated with a top Ag electrode, a polyethylene oxide layer, and a bottom Pt electrode

We developed a conductive-bridging random-access memory cell with a sandwiched structure of an Ag top electrode, an electrolyte (polyethylene oxide: PEO), and a Pt bottom electrode on a 250-nm hole pattern. The cell demonstrated the bipolar switching behavior of resistive randomaccess memory. The nonvolatile characteristics of the cell strongly depended on the wt% (PEO thickness): i.e ., maximum memory characteristics, such as a retention-time of > 1 × 10 5 s with a memory margin of 1 × 10 4 and program/erase cycles of > 10 3 with a memory margin of 1.3 × 10 4 , which are very close to thereof a commercial memory cell, were observed at a specific wt% of PEO (0.4 wt%)