Optimization of rapid thermal processing for uniform temperature distribution on wafer surface

An optimization of rapid thermal processing (RTP) was conducted to obtain uniform temperature distribution on a wafer surface by using linear programming and radiative heat transfer modeling. The results show that two heating lamp zones are needed to maintain uniform wafer temperature and the optimal lamp positions are unique for a given geometry and not affected by wafer temperatures. The radii of heating lamps, which were obtained by optimization, are 45 mm and 108 mm. The emissivity and temperature of the chamber wall do not significantly affect the optimal condition. With obtained optimum geometry of the RTP chamber and lamp positions, the wafer surface temperatures were calculated. The uniformity allowance of the wafer surface is less than ±1°C when the mean temperature of the wafer surface is 1000°C.